| PART |
Description |
Maker |
| IRF646 FN2169 |
14A/ 275V/ 0.280 Ohm/ N-Channel Power MOSFET
14A, 275V, 0.280 Ohm, N-Channel Power MOSFET
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| AOD458 AOD458-11 |
250V,14A N-Channel MOSFET
|
Alpha & Omega Semicondu...
|
| KE10.2100.105 KE15.1100.109 KE10.6100.107 KE10.210 |
Power Entry Module; IEC; Voltage Rating: 250V; Current Rating: 13A; Terminal Type: Quick Connect Tabs; Appliance inlet; fuseholder; and series-parallel voltage selector 10A, 125/250VAC, MALE, MAINS POWER CONNECTOR, SOLDER, SOCKET
|
SCHURTER AG
SCHURTER INC
|
| 5KP64 5KP10 5KP9.0A 5KP7.0A 5KP8.0A 5KP14A |
RES 25 OHM 5% 225W TUBULAR WW
MOSFET N-CH 250V 14A D2PAK 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Unidirectional and bidirectional Transient Voltage Suppressor diodes 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
SEMIKRON
|
| CPW235P CPW256P |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET功率模块|独立| 250V五（巴西）直| 16A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 14A I(D)
|
Atmel, Corp.
|
| AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 10A条一（c）|
|
SCHURTER AG
|
| IRF634NL IRF634NS IRF634NSTRR |
Power MOSFET(Vdss=250V/ Rds(on)=0.435ohm/ Id=8.0A)
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.435ohm，身份证\u003d 8.0A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直| 8A条（丁）|63AB
|
International Rectifier, Corp.
|
| HGT1S14N41G3VLS HGTP14N41G3VL |
TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | TO-220AB
14A, 410V N-Channel, Logic Level, Voltage Clamping IGBTs(14A, 410V N沟道,逻辑电平,电压箝位IGBTs) 14A10V N沟道，逻辑电平，电压钳位的IGBT（第14A10V 沟道，逻辑电平，电压钳位的IGBT
|
Intersil Corporation
Intersil, Corp.
|
| HV506 HV506DG HV506PG HV506X |
275V 40-Channel Row Driver with SCR Outputs
|
Supertex Inc
SUTEX[Supertex, Inc]
Supertex, Inc.
|
| IRFP264 IRFP264PBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A) 功率MOSFET（减振钢板基本\u003d 250V，的Rdson）\u003d 0.075ohm，身份证\u003d 38A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| MKP3361X1 |
Class X1, AC 275V, C-range 1nF-1μF, 10-27,5mm pitch, boxed
|
Vishay
|
